[27p-G21-1~18] 15.4 III-V-group nitride crystals

[27p-G21-3] △Influence of c-plane Sapphire Substrate Miscut Angle on Indium Content of MOVPE-grown N-polar InGaN Alloys

^○Kanako Shojiki¹, Jung-Hung Choi^1,2, Hirofumi Shindo¹, Takeshi Kimura^1,2, Tomoyuki Tanikawa^1,2, Takashi Hanada^1,2, Ryuji Katayama^1,2, Takashi Matsuoka^1,2 (IMR Tohoku Univ.¹, JST-CREST²)

Keywords:InGaN、N-polar、MOVPE