[27p-G21-1~18] 15.4 III-V-group nitride crystals

[27p-G21-6] ▲GaN thickness optimization by in-situ observation of GaN growth on Si (111)

^○Cai Liu¹, Hassanet Sodabanlu¹, Masakazu Sugiyama², Yoshiaki Nakano^{1, 2} (RCAST, The Univ. of Tokyo¹, School of Engineering, The Univ. of Tokyo²)

Keywords:GaN on Si、in-situ observation