[27p-G21-1~18] 15.4 III-V-group nitride crystals

[27p-G21-8] Dependence of dislocation density of c-plane GaN grown on cone patterned sapphire substrates on triangular lattice rotation angle

^○Yutaro Hirota¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

Keywords:窒化ガリウム、転位