Control of crystalline facets by Eu doping in selective area grown GaN

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Mar 27, 2013 1:00 PM - 6:00 PM G21 (B5 4F-2405)

^○Ryosuke Hasegawa¹, Ryuta Wakamatsu¹, Takehiro Tamaoka¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Keywords:Eu添加GaN、選択成長