[27p-G4-1~11] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

[27p-G4-11] △Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3

^○Shirou Ozaki¹, Toshihiro Ohki¹, Masahito Kanamura¹, Tadahiro Imada¹, Norikazu Nakamura¹, Naoya Okamoto¹, Toyoo Miyajima¹, Toshihide Kikkawa¹ (Fujitsu Laboratories Ltd.¹)

Keywords:絶縁ゲート型GaN-HEMT、ALD-Al2O3、閾値シフト