Formation of Polycrystalline Si Using Selective Heating Method of Transition Metal by Hydrogen Radical Irradiation and Its Application to Semiconductor Device Fabrication Process (8.6)

Hiroki Nakaie

[27p-PA4-11] Formation of Polycrystalline Si Using Selective Heating Method of Transition Metal by Hydrogen Radical Irradiation and Its Application to Semiconductor Device Fabrication Process (8.6)

^○Hiroki Nakaie¹, Tetsuji Arai¹, Takahiro Oohira¹, Keisuke Arimoto¹, Junji Yamanaka¹, Tetsuya Sato¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu², Kentarou Sawano³, Yasuhiro Shiraki³ (Univ. of Yamanashi¹, SST Inc.², Tokyo City Univ.³)

Keywords:水素ラジカル、選択加熱、多結晶Si

Presentation information

[27p-PA4-1~17] 8. Plasma Electronics

[27p-PA4-11] Formation of Polycrystalline Si Using Selective Heating Method of Transition Metal by Hydrogen Radical Irradiation and Its Application to Semiconductor Device Fabrication Process (8.6)