[27p-PB5-1~13] 13.6 Silicon devices / Integration technology

[27p-PB5-5] Realization of high mobility junction-less InGaAs-OI Tri-gate nMOSFETs

^○Toshifumi Irisawa¹, Minoru Oda¹, Yoshihiko Moriyama¹, Keiji Ikeda¹, Eiko Mieda¹, Wipakorn Jevasuwan¹, Tatsurou Maeda¹, Osamu Ichikawa², Toshio Ishihara², Masahiko Hata², Tsutomu Tezuka² (AIST-GNC¹, Sumitomo Cemical Co. Ltd²)

Keywords:InGaAs、Tri-gate、MOSFET