[27p-PB5-1~13] 13.6 Silicon devices / Integration technology

[27p-PB5-6] Threshold Voltage Control Using Second Gate in 4-Terminal Tunnel FinFETs

^○Wataru Mizubayashi^{1, 2}, Koichi Fukuda^{1, 2}, Takahiro Mori^{1, 2}, Kazuhiko Endo^{1, 2}, Yongxun Liu^{1, 2}, Takashi Matsukawa^{1, 2}, Shininchi O’uch^{1, 2}, Yuki Ishikawa², Shinji Migita^{1, 2}, Yukinori Morita^{1, 2}, Akihito Tanabe^1,2, Junichi Tsukada², Hiromi Yamauchi², Meishoku Masahara^1,2, Hiroyuki Ota^1,2 (GNC-AIST¹, NeRI -AIST²)

Keywords:トンネルFET、Vth制御、FinFET