The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

08. Plasma Electronics » 8.4 Plasma etching

[28a-A5-1~6] 8.4 Plasma etching

Thu. Mar 28, 2013 9:15 AM - 10:45 AM A5 (K1 3F-303)

[28a-A5-6] ▲In situ Surface analysis of GaAs irradiated by Cl plasma beams

○Jongyun Park1, Takuya Takeuchi1, Kenji Ishikawa1, Yuichi Setsuhara2, Keigo Takeda1, Hiroki Kondo1, Makoto Sekine1, Masaru Hori1 (Nagoya Univ.1, Osaka Univ.2)

Keywords:GaAs