[28a-G10-1~11] 17.4 Device application

[28a-G10-1] Electrostatically-Reversible Polarity of Dual-Gated Graphene Transistors with He Ion Irradiated Channel

^○Shu Nakaharai¹, Tomohiko Iijima², Shinichi Ogawa³, Kazuhito Tsukagoshi⁴, Shintaro Sato¹, Naoki Yokoyama¹ (GNC-AIST¹, ICAN-AIST², NeRI-AIST³, MANA-NIMS⁴)

Keywords:グラフェン、トランジスタ