The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28a-G11-1~9] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 10:00 AM - 12:30 PM G11 (B5 2F-2205)

[28a-G11-7] △MCTS analysis of hole traps in MOCVD n-GaN

○(M1)Zecheng Liu1, Jiangdong Cao1, Kenji Ishikawa1, Masaru Hori1, Toshiya Matsumura2, Akihiro Arubi2, Asahi Kojima2, Unhi Honda2, Yutaka Tokuda2, Hiroyuki Ueda3, Tetsuo Narita3, Tsutomu Uesugi3, Tooru Kachi3 (Nagoya University1, Aichi Inst. of Technol.2, Toyota Central R&D Lab. Inc.3)

Keywords:n-GaN