[28a-G2-1~12] 13.3 絶縁膜技術

[28a-G2-10] ▼Improvement of Al₂O₃/InGaAs Interfaces by Ultrathin Ga Oxide Passivation (12:30 PM ～ 12:45 AM)

^○（PC）Wipakorn Jevasuwan，Tatsuro Maeda，Noriyuki Miyata，Minoru Oda，Toshifumi Irisawa，Tsutomu Tezuka，Tetsuji Yasuda (GNC-AIST)

キーワード：Insulator, InGaAs