[28a-G2-1~12] 13.3 Insulator technology

[28a-G2-3] Analytical Procedure of Chemical Structures of Interfacial Transition Layer Formed on Si(100) by Angle-Resolved Photoelectron Spectroscopy

^○Tomoyuki Suwa¹, Akinobu Teramoto¹, Takayuki Muro², Toyohiko Kinoshita², Tadahiro Ohmi¹, Takeo Hattori¹ (Tohoku Univ.¹, JASRI²)

Keywords:界面構造、光電子分光