△Characterization of SiGe MOS interfaces formed by plasma post-nitridation

Presentation information

Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

Thu. Mar 28, 2013 10:00 AM - 1:15 PM G2 (B5 1F-2102)

^○（M1C）Jaehoon Han¹, Rui Zhang¹, Takenori Osada², Masahiko Hata², Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. of Tokyo¹, Sumitomo Chemical Co. Ltd.²)

Keywords:SiGe、ECR、プラズマ後窒化