[28a-G20-5] Change in the emission wavelength of InAs quantum dots by controlling the thickness of InGaAs capping layer
Keywords:InAs量子ドット、Photoluminescence
Symposium(Oral presentation)
Symposium » ・Recent status for fabrication and characterization of semiconductor quantum dots
Thu. Mar 28, 2013 9:30 AM - 12:30 PM G20 (B5 4F-2404)
Keywords:InAs量子ドット、Photoluminescence