[28a-G21-1~11] 15.4 III-V-group nitride crystals

[28a-G21-10] △Polarity inversion of AlN film grown using Ga-Al liquid phase epitaxy technique

^○Masayoshi Adachi¹, Kenji Tsuda¹, Ikuma Watanabe¹, Masashi Sugiyama², Junji Iida², Akikazu Tanaka², Hiroyuki Fukuyama¹ (Tohoku Univ.¹, Sumitomo Metal Mining Co. Ltd.²)

Keywords:窒化アルミニウム、液相成長