The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[28a-G21-1~11] 15.4 III-V-group nitride crystals

Thu. Mar 28, 2013 9:00 AM - 12:00 PM G21 (B5 4F-2405)

[28a-G21-5] Improvement in large diameter semi-polar GaN by SiO2 mask

Hiroshi Furuya1, ○Yasuhiro Hashimoto1, Motohisa Ueno1, Keisuke Yamane1, Narihito Okada1, Kazuyuki Tadatomo1 (Grad. School of Sci. & Eng., Yamaguchi Univ.1)

Keywords:GaN、Large diameter、SiO2 mask