△Improvement on Flatness of GaN by Flow Modulation on Hydride Vapor Phase Epitaxy

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Mar 28, 2013 9:00 AM - 12:00 PM G21 (B5 4F-2405)

^○Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Grad. School of Sci. & Eng., Yamaguchi Univ.¹)

Keywords:GaN、HVPE、Substrate