[28a-G21-8] △Control of nucleation for HVPE growth of AlN on 6H-SiC substrate
Keywords:窒化物半導体、HVPE、6H-SiC
Regular sessions(Oral presentation)
15. Crystal Engineering » 15.4 III-V-group nitride crystals
Thu. Mar 28, 2013 9:00 AM - 12:00 PM G21 (B5 4F-2405)
Keywords:窒化物半導体、HVPE、6H-SiC