[28a-G22-1~13] 15.6 IV-group-based compounds

[28a-G22-12] Threshold voltage instability of SiC-MOSFETs

^○Junji Senzaki^1,2, Atsushi Shimozato², Kazutoshi Kojima^1,2, Shinsuke Harada^1,2, Keiko Ariyoshi¹, Takahito Kojima¹, Yasunori Tanaka^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

Keywords:パワーデバイス、信頼性