Microstructure of defect on the basal plane formed by the threading screw dislocation conversion during solution growth process

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Mar 28, 2013 9:00 AM - 12:30 PM G22 (B5 4F-2406)

^○Shunta Harada¹, Ryota Kunimatsu¹, Miho Tagawa¹, Yuta Yamamoto², Shigeo Arai², Nobuo Tanaka², Toru Ujihara¹ (Nagoya Univ.¹, Nagoya Univ.²)

Keywords:SiC、パワーデバイス、溶液成長