[28a-G6-1~11] 13.5 Si process technology

[28a-G6-11] △Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility

^○Minoru Oda¹, Toshifumi Irisawa¹, Yuuichi Kamimuta¹, Wipakorn Jevasuwan¹, Tatsuro Maeda¹, Osamu Ichikawa², Tsutomu Tezuka¹ (AIST¹, Sumitomo Chemical Co., Ltd.²)

Keywords:InGaAs、移動度、high-k