[28a-G9-1~11] 13.6 Silicon devices / Integration technology

[28a-G9-1] A Methodology of Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable BiCS Type NAND Flash Memory

^○Kousuke Miyaji¹, Yuki Yanagihara², Ken Takeuchi¹ (Chuo Univ.¹, Univ. of Tokyo²)

Keywords:NANDフラッシュメモリ、三次元、BiCS