[28p-F2-1~19] 6.3 Oxide-based electronics

[28p-F2-2] Effects of grain-boundary potential barrier height and its fluctuation on conductivity of polycrystalline semiconductors in the ionized-impurity-scattering dominated case

^○Yasutomo Kajikawa¹ (Shimane Univ.¹)

Keywords:半導体、多結晶、導電率