[28p-G11-1~18] 14.3 Electron devices and Process technology

[28p-G11-10] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs

^○Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (NICT¹, Fujitsu Lab.²)

Keywords:InAlN、HEMT、MIS