[28p-G11-1~18] 14.3 Electron devices and Process technology

[28p-G11-11] △Effects of nitridation on gate oxide for SiC trench MOSFETs

^○Keiko Ariyoshi^1,2, Shinsuke Harada^1,3, Junji Senzaki^1,3, Takahito Kojima^1,4, Kazutoshi Kojima^1,3, Yasunori Tanaka^1,3, Takashi Shiohe^1,2 (FUPET¹, Toshiba Corp.², AIST³, Fuji Electric Co., Ltd⁴)

Keywords:SiC、MOSFET