The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

[28p-G11-12] △Low resistive GaInN tunnel junction devices

○（M1）Takatoshi Morita1, Mitsuru Kaga1, Yuka Kuwano1, Kenjo Matsui1, Masahiro Watanabe1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1, Isamu Akasaki1,2 (meijo Univ.1, Nagoya Univ.2)

Keywords:トンネル接合、GaInN、低抵抗化