△Growth Temperature Dependence of β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial MBE Growth

Kohei Sasaki

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

[28p-G11-13] △Growth Temperature Dependence of β-Ga₂O₃ Homoepitaxial MBE Growth

^○Kohei Sasaki^1,2, Masataka Higashiwaki^2,3, Akito Kuramata¹, Takekazu Masui⁴, Shigenobu Yamakoshi¹ (Tamura Corp.¹, NICT², JST PRESTO³, Koha Co., Ltd.⁴)

Keywords:Ga2O3、酸化ガリウム、酸化ガリウム

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Presentation information

[28p-G11-1~18] 14.3 Electron devices and Process technology

[28p-G11-13] △Growth Temperature Dependence of β-Ga2O3 Homoepitaxial MBE Growth

[28p-G11-13] △Growth Temperature Dependence of β-Ga₂O₃ Homoepitaxial MBE Growth