The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

[28p-G11-3] High Temperature Characteristics in AlGaN/GaN Open-Gate HFET with Recessed-Gate Enhanced-Barrier Structures

○Narihiko Maeda1, Masanobu Hiroki2, Satoshi Sasaki2, Yuichi Harada2 (NTT Photonics Labs.1, NTT Basic Research Labs.2)

Keywords:半導体、transistor、トランジスタ