Proposal of Effective Acceptor Levels for Simulating Current/Voltage Characteristics of GaN Bipolar Devices

Kazuhiro Mochizuki

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

[28p-G11-2] Proposal of Effective Acceptor Levels for Simulating Current/Voltage Characteristics of GaN Bipolar Devices

^○Kazuhiro Mochizuki¹, Tomoyoshi Mishima², Yuya Ishida³, Yoshitomo Hatakeyama³, Kazuki Nomoto³, Naoki Kaneda², Tadayoshi Tsuchiya², Akihisa Terano¹, Tomonobu Tsuchiya¹, Hiroyuki Uchiyama¹, Shigehisa Tanaka¹, Tohru Nakamura³ (Hitachi, Ltd.¹, Hitachi Cable, Ltd.², Hosei Univ.³)

Keywords:GaN、シミュレーション、アクセプタ