The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

[28p-G11-6] ▲Field Isolation of GaN MOSFET by Boron Ion Implantation

○Ying Jiang1,2, Qingpeng Wang1,2, Kentaro Tamai1, Satoko Shinkai3, Takahiro Miyashita4, Shin-Ichi Motoyama4, Dejun Wang2, Jin-Ping Ao1, Yasuo Ohno1 (The Univ. of Tokushima1, Dalian Univ. of Tech.2, Kyushu Inst. of Tech.3, SAMCO Inc.4)

Keywords:GaN MOSFETs、field isolation、boron ion implantation