[28p-G11-1~18] 14.3 Electron devices and Process technology

[28p-G11-7] Electrical Characteristics of AlGaN/GaN Devices with La₂O₃ Gate Dielectrics on Annealing Temperature

^○Guoqiang Lu¹, Jiangning Chen¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:La2O3