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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

[28p-G11-8] Electrical characteristics of AlGaN/GaN MIS-HEMTs with Al₂O₃ deposited by ALD

^○（B）Yusuke Yoshida¹, Yasuhiro Iwata¹, Joseph Freedsman¹, Toshiharu Kubo¹, Takashi Egawa¹ (Nagoya Inst. Tech.¹)

Keywords:ALD、MIS-HEMT