[28p-G12-1~12] Synthesis & Characterization of 2 dimensional layered materials

[28p-G12-11] Investigation of Device Fabrication Processes for Ultra-thin MoS₂ Transistors

^○Rui Kanemura¹, Takahiro Mori², Eiichiro Watanabe³, Daiju Tsuya³, Satoshi Moriyama³, Tatsuro Maeda², Noriyuki Uchida², Noriyuki Miyata², tetsuji Yasuda², Masatoshi Tanaka¹, Atsushi Ando² (Yokohama National Univ¹, AIST², NIMS³)

Keywords:MoS2、FET、ラマン分光