[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28p-G19-17] Electroluminescence of n-ZnO/p-Si heterojunction fabricated by PLD technique with bias voltage application

^○Yuki Seno¹, Takao Komiyama¹, Yasunori Chonan¹, Hiroyuki Yamaguchi¹, Takashi Aoyama¹ (Akita Prefectural Univ.¹)

Keywords:ZnO、PLD法、エレクトロルミネッセンス