Dominant factor of Ge Schottky Diode Resistivity on Insulator Thickness

Presentation information

Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

Thu. Mar 28, 2013 2:30 PM - 6:45 PM G2 (B5 1F-2102)

^○Toshimitsu Nakamura¹, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

Keywords:Ge Schottky insulator 抵抗絶縁膜挿入