The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[28p-G21-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 28, 2013 3:45 PM - 7:00 PM G21 (B5 4F-2405)

[28p-G21-10] Effect of a thin AlN/GaN superlattice interlayer on the strain of GaN grown on Si(111) substrates

Xuqiang Shen1, Tokio Takahashi1, Tepei Uetake1, Yuichi Sakamura1, Toshihide Ide1, Mitsuaki Shimizu1 (AIST1)

Keywords:GaN、Strain、Superlattice