[28p-G22-1~19] 15.6 IV-group-based compounds

[28p-G22-10] Electrically detected magnetic resonance spectroscopy on interface defects in 4H-SiC(000-1) C-face metal-oxide-semiconductor field effect transistors

^○Takahide Umeda¹, Yoshihiro Satoh¹, Ryo Arai¹, Mitsuo Okamoto², Shinsuke Harada², Ryouji Kosugi², Hajime Okumura², Takahiro Makino³, Takeshi Ohshima³ (Univ. of Tsukuba¹, AIST², JAEA³)

Keywords:炭化ケイ素、界面欠陥、電子スピン共鳴