[28p-G22-15] △Evaluation of 4H-SiC surfaces after reactive ion etching by the μ-PCD method
Keywords:4H-SiC、μ-PCD法、反応性イオンエッチング
Regular sessions(Oral presentation)
15. Crystal Engineering » 15.6 IV-group-based compounds
Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)
Keywords:4H-SiC、μ-PCD法、反応性イオンエッチング