The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

[28p-G22-1~19] 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

[28p-G22-15] △Evaluation of 4H-SiC surfaces after reactive ion etching by the μ-PCD method

Yuto Mori1, Masashi Kato1, Masaya Ichimura1 (Nagoya Inst. of Tech.1)

Keywords:4H-SiC、μ-PCD法、反応性イオンエッチング