Temperature dependence of capture cross sections for deep levels in p-type 4H-SiC

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

^○Kazuki Yoshihara¹, Masashi Kato¹, Masaya Ichimura¹, Tomoaki Hatayama², Takeshi Ohshima³ (Nagoya Inst of Tech.¹, NAIST.², JAEA³)

Keywords:4H-SiC、捕獲断面積