Low temperature fabrication of Ohmic contact for p-type 4H-SiC using Al/Ti/Sn

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

^○Kota Hatayama¹, Keisuke Yamamoto^2,3, Dong Wang¹, Hiroshi Nakashima² (Kyushu Univ. I-EggS¹, Kyushu Univ. KASTEC², JSPS research fellow³)

Keywords:SiC、Ohmic Contact