Phosphorus Doping of 4H SiC using Laser Irradiation in Phosphoric Solution

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

^○Akihiro Ikeda¹, Koji Nishi¹, Daichi Marui¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (Kyushu Univ.¹)

Keywords:laser-doping、SiC