△High-Temperature Operation of SiC pn Photodiode up to 500°C

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

^○Naoki Watanabe¹, Tsunenobu Kimoto¹, Jun Suda¹ (Kyoto Univ.¹)

Keywords:SiC、フォトダイオード、高温動作