21-kV SiC BJTs With Space-Modulated Junction Termination Extension

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

^○Takafumi Okuda¹, Hiroki Miyake¹, Tsunenobu Kimoto¹, Jun Suda¹ (Kyoto Univ.¹)

Keywords:SiC、BJT、高耐圧