[28p-G6-1~17] 13.5 Si process technology

[28p-G6-1] △Evaluation of stress induced by plasma assisted ALD SiN film

^○Masaya Nagasaka¹, Kouki Nagata^1,3, Takuya Yamaguchi¹, Atsushi Ogura¹, Hiroshi Oji², Jinyon Son², Ichirou Hirosawa², Yoshimasa Watanabe⁴, Yoshihiro Hirota⁴ (Meiji Univ.¹, JASRI², JSPS Research Fellow³, Tokyo Electron Ltd.⁴)

Keywords:SiN