[28p-G6-1~17] 13.5 Si process technology

[28p-G6-13] Grain Growth Control Using Amorphous Silicon nm-wide-Strips during High Speed Lateral Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation

^○（B）Shogo Yamamoto¹, Yuji Fujita¹, Shohei Hayashi¹, Seiji Morisaki¹, Takahiro Kamikura¹, Muneki Akazawa¹, Hideki Murakami¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

Keywords:マイクロ熱プラズマジェット