[28p-G6-1~17] 13.5 Si process technology

[28p-G6-9] Dopant Distribution in Trench Polysilicon by Atom Probe Tomography

^○Fumiko Yano^1,2, Hisashi Takamizawa¹, Yasuo Shimizu¹, Kouji Inoue¹, Yasuyoshi Nagai¹, Yorinobu Kunimune³, Masao Inoue³, Akio Nishida³, Masahiro Ikeda³ (IMR Tohoku Univ.¹, Tokyo City Univ.², Renesas Electronics Corp.³)

Keywords:三次元アトムプローブ、多結晶シリコン、不純物分布