The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.2 Semiconductor surfaces

[28p-G8-1~14] 13.2 Semiconductor surfaces

Thu. Mar 28, 2013 1:00 PM - 4:45 PM G8 (B5 2F-2202)

[28p-G8-6] ▲Investigation of Si surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering

Dae-Hee Han1, Shun-ichiro Ohmi1 (Tokyo Inst. of Tech.1)

Keywords:surface roughness