[28p-G8-1~14] 13.2 Semiconductor surfaces

[28p-G8-9] △First-principles analysis on diffusion mechanism of contamination metal atoms in β-₃N₄ crystals

^○Syunsuke Kobayashi¹, Daiki Shibata¹, Koji Sueoka¹, Jun Komachi², Koichiro Saga² (Okayama Pref. Univ.¹, Sony Corporation²)

Keywords:シリコン窒化膜、不純物金属、第一原理計算