[28p-PA1-1~34] 15.4 III-V-group nitride crystals

[28p-PA1-18] Dislocation reduction of GaN by using patterned (110)Si substrate

^○Kengo Nawa^1,2, Tadashi Mitsunari^1,2, Yoshio Honda^1,2, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Reseach Center²)

Keywords:窒化物半導体